Electrolyte-gated SmCoO3 thin-film transistors exhibiting thickness-dependent large switching ratio at room temperature.
basic_science · Level V
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- Record sourced from PubMed, PMID 23382006.
- Also identified by DOI 10.1002/adma.201204505.
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Abstract
A Mott transistor that exhibits a large switching ratio of more than two orders at room temperature is demonstrated by using the electric double layer of an ionic liquid for gating on a strongly correlated electron system SmCoO3. From the thickness dependence of the on-state channel current, we estimate the screening length of the SmCoO3 to be ∼5 nm. The good carrier confinement within the Thomas-Fermi screening length demonstrates that the SmCoO3-channel electric double layer transistor is the first candidate for a two-dimensional Mott transistor.