Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots.
basic_science · Level V
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- Record sourced from PubMed, PMID 23386379.
- Also identified by DOI 10.1002/adma.201204572.
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Abstract
Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.