High k nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors.

Han, Hsieh-Cheng; Chong, Cheong-Wei; Wang, Sheng-Bo; Heh, Dawei; Tseng, Chi-Ang; Huang, Yi-Fan; Chattopadhyay, Surojit; Chen, Kuei-Hsien et al. · Nano Lett · 2013

basic_science · Level V

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Abstract

A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ~300 μF cm(-2) is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al2O3) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (!5 × 10(10) cm(-2)) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials.

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