Ambipolar surface conduction in ternary topological insulator Bi₂(Te₁-xSex)₃ nanoribbons.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 23441571.
- Also identified by DOI 10.1021/nn304684b.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
We report the composition- and gate voltage-induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature-dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ∼10%. In Bi2(Te1-xSex)3 nanoribbons with x ≈ 20%, gate voltage enables ambipolar modulation of resistance (or conductance) in samples with thicknesses around or larger than 100 nm, indicating significantly enhanced contribution in transport from the gapless surface states.