PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1).
basic_science · Level V
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- Record sourced from PubMed, PMID 23452235.
- Also identified by DOI 10.1021/nl304753n.
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Abstract
PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm(2) V(-1) s(-1) are made by infilling sulfide-capped QD films with amorphous alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations. Partial infilling tunes the electrical characteristics of the FETs.
Medical subject headings
- Lead
- Quantum Dots
- Selenium Compounds
- Transistors, Electronic