Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 23464836.
- Also identified by DOI 10.1021/nl304157d.
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Abstract
We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is ~20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.2 K with a line width of 101 μeV and a vanishing two-photon emission probability of g(2)(0) = 0.031(2). This new nanostructure may open new ways for designing novel quantum optoelectronic devices.
Medical subject headings
- Nanostructures
- Nanotechnology
- Nanowires
- Quantum Dots