Resolution limits of electron-beam lithography toward the atomic scale.
basic_science · Level V
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- Record sourced from PubMed, PMID 23488936.
- Also identified by DOI 10.1021/nl304715p.
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Abstract
We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss spectroscopy.
Medical subject headings
- Electrons
- Microscopy, Electron, Scanning Transmission
- Organosilicon Compounds