Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic.
basic_science · Level V
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- Record sourced from PubMed, PMID 23512721.
- Also identified by DOI 10.1002/adma.201300211.
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Abstract
Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm(-2) V(-1) s(-1) ), low operation voltage (<2 V), and good electrical/mechanical stabilities.