Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments.
basic_science · Level V
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- Record sourced from PubMed, PMID 23590667.
- Also identified by DOI 10.1021/nn305301b.
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Abstract
Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ~10(10) cm Hz(1/2)/W), fast photoresponse (rise time of ~70 μs and fall time of ~110 μs), and high thermal stability (at a working temperature of up to 200 °C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (~10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.