Facile encapsulation of oxide based thin film transistors by atomic layer deposition based on ozone.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 23592395.
- Also identified by DOI 10.1002/adma.201300549.
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Abstract
A simplified encapsulation strategy for metal-oxide based TFTs, using ozone instead of water as an oxygen source in a low-temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy- and time-consuming post-treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e.g., Al2 O3 , TiO2 , ZrO2 ) and metal-oxide channel semiconductors (e.g., zinc-tin-oxide (ZTO), indium-gallium-zinc-oxide (IGZO)).
Medical subject headings
- Membranes, Artificial
- Metals
- Transistors, Electronic