Transit phenomena in organic field-effect transistors through Kelvin-probe force microscopy.
basic_science · Level V
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- Record sourced from PubMed, PMID 23625775.
- Also identified by DOI 10.1002/adma.201300004.
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Abstract
The temporal evolution of the surface-potential distribution in the channel of pentacene based field-effect transistors is investigated during the charge reversal from the electron to the hole dominated operation. This measurement allows the determination of the carrier density and electric field dependent hole mobility in the sub-threshold regime of the transistor.