Upgraded silicon nanowires by metal-assisted etching of metallurgical silicon: a new route to nanostructured solar-grade silicon.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 23637063.
- Also identified by DOI 10.1002/adma.201300973.
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Abstract
Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.
Medical subject headings
- Nanowires
- Silicon