Universal electric-field-driven resistive transition in narrow-gap Mott insulators.

Stoliar, Pablo; Cario, Laurent; Janod, Etiene; Corraze, Benoit; Guillot-Deudon, Catherine; Salmon-Bourmand, Sabrina; Guiot, Vincent; Tranchant, Julien et al. · Adv Mater · 2013

basic_science · Level V

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Record sourced from PubMed, PMID 23649904.
Also identified by DOI 10.1002/adma.201301113.
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Abstract

A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.

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