Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.
basic_science · Level V
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- Record sourced from PubMed, PMID 23675872.
- Also identified by DOI 10.1021/nl4013166.
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Abstract
We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics.