Temperature-independent transport in high-mobility dinaphtho-thieno-thiophene (DNTT) single crystal transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 23696267.
- Also identified by DOI 10.1002/adma.201300886.
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Abstract
The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm(2) V(-1) s(-1) . Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.