High-gain phototransistors based on a CVD MoS₂ monolayer.

Zhang, Wenjing; Huang, Jing-Kai; Chen, Chang-Hsiao; Chang, Yung-Huang; Cheng, Yuh-Jen; Li, Lain-Jong · Adv Mater · 2013

basic_science · Level V

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Abstract

A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W(-1) ) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS2 , decreasing the carrier mobility, photoresponsivity, and photogain.

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