Oxide heterostructure resistive memory.
basic_science · Level V
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- Record sourced from PubMed, PMID 23724783.
- Also identified by DOI 10.1021/nl401287w.
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Abstract
Resistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from unipolar switching to complementary switching and bipolar switching with linear and nonlinear on-states and high endurance. Each layer can be tailed for a specific function during resistance switching, thus greatly improving the degree of control and flexibility for optimized device performance.