Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots.
basic_science · Level V
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- Record sourced from PubMed, PMID 23775671.
- Also identified by DOI 10.1002/adma.201301339.
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Abstract
One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.