Wet chemical etching of semipolar GaN planes to obtain brighter and cost-competitive light emitters.
basic_science · Level V
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- Record sourced from PubMed, PMID 23775709.
- Also identified by DOI 10.1002/adma.201301640.
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Abstract
Spotlight on etching: (11-22) semipolar GaN plane light-emitting diodes (LEDs) are demonstrated using a wet-etching process. A trigonal prism cell structure with a (0001) c plane and nnn{10-10} m planes is formed after KOH wet etching, and leads to a better ohmic contact and enhanced light extraction. LEDs fabricated by wet etching show excellent output performance 1.89 times higher than that of the reference LEDs.