Voltage-impulse-induced non-volatile ferroelastic switching of ferromagnetic resonance for reconfigurable magnetoelectric microwave devices.

Liu, Ming; Howe, Brandon M; Grazulis, Lawrence; Mahalingam, Krishnamurthy; Nan, Tianxiang; Sun, Nian X; Brown, Gail J · Adv Mater · 2013

basic_science · Level V

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Abstract

A critical challenge in realizing magnetoelectrics based on reconfigurable microwave devices, which is the ability to switch between distinct ferromagnetic resonances (FMR) in a stable, reversible and energy efficient manner, has been addressed. In particular, a voltage-impulse-induced two-step ferroelastic switching pathway can be used to in situ manipulate the magnetic anisotropy and enable non-volatile FMR tuning in FeCoB/PMN-PT (011) multiferroic heterostructures.