Line patterns from cylinder-forming photocleavable block copolymers.
basic_science · Level V
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- Record sourced from PubMed, PMID 23868791.
- Also identified by DOI 10.1002/adma.201301556.
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Abstract
A robust route for the preparation of nanoscopic line patterns from polystyrene-block-poly(ethylene oxide) featuring a photocleavable o-nitrobenzyl ester junction is demonstrated. After mild UV (λ = 365 nm) exposure and selective removal of the PEO microdomains, the polymer trench patterns are used as scaffold to fabricate highly ordered arrays of silica or Au line patterns.