Line patterns from cylinder-forming photocleavable block copolymers.

Gu, Weiyin; Zhao, Hui; Wei, Qingshuo; Coughlin, E Bryan; Theato, Patrick; Russell, Thomas P · Adv Mater · 2013

basic_science · Level V

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Abstract

A robust route for the preparation of nanoscopic line patterns from polystyrene-block-poly(ethylene oxide) featuring a photocleavable o-nitrobenzyl ester junction is demonstrated. After mild UV (λ = 365 nm) exposure and selective removal of the PEO microdomains, the polymer trench patterns are used as scaffold to fabricate highly ordered arrays of silica or Au line patterns.