Giant thermovoltage in single InAs nanowire field-effect transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 23869467.
- Also identified by DOI 10.1021/nl401482p.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Millivolt range thermovoltage is demonstrated in single InAs nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias ΔT > 10 K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity σ between room temperature and 100 K. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.