Electric-field-dependent spin polarization in GdN spin filter tunnel junctions.
basic_science · Level V
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- Record sourced from PubMed, PMID 23893892.
- Also identified by DOI 10.1002/adma.201300636.
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Abstract
Tunnel junctions incorporating GdN ferromagnetic semiconductor barriers show a spin polarization exceeding 90% and a high conductance. These devices show an unusual low-bias conductance peak arising from a strong bias-dependence of the spin polarization. This originates from a strong magneto-electric coupling within a double Schottky barrier formed with the NbN electrodes.