Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.
basic_science · Level V
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- Record sourced from PubMed, PMID 23919559.
- Also identified by DOI 10.1021/nl4021045.
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Abstract
Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition.
Medical subject headings
- Gallium
- Nanotechnology