Fractional diffusion in silicon.
basic_science · Level V
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- Record sourced from PubMed, PMID 23925994.
- Also identified by DOI 10.1002/adma201302559.
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Abstract
Microscopic processes leading to ultrafast laser-induced melting of silicon are investigated by large-scale ab initio molecular dynamics simulations. Before becoming a liquid, the atoms are shown to be fractionally diffusive, which is a property that has so far been observed in crowded fluids consisting of large molecules. Here, it is found to occur in an elemental semiconductor.