Suppression of ionic liquid gate-induced metallization of SrTiO3(001) by oxygen.
basic_science · Level V
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- Record sourced from PubMed, PMID 23978006.
- Also identified by DOI 10.1021/nl402088f.
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Abstract
Ionic liquid gating of three terminal field effect transistor devices with channels formed from SrTiO3(001) single crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxygen gas introduced external to the device whereas argon and nitrogen have no effect. The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation.
Medical subject headings
- Ionic Liquids
- Oxides
- Oxygen
- Strontium
- Titanium