Graphene for true Ohmic contact at metal-semiconductor junctions.
basic_science · Level V
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- Record sourced from PubMed, PMID 23978262.
- Also identified by DOI 10.1021/nl402367y.
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Abstract
The rectifying Schottky characteristics of the metal-semiconductor junction with high contact resistance have been a serious issue in modern electronic devices. Herein, we demonstrated the conversion of the Schottky nature of the Ni-Si junction, one of the most commonly used metal-semiconductor junctions, into an Ohmic contact with low contact resistance by inserting a single layer of graphene. The contact resistance achieved from the junction incorporating graphene was about 10(-8) ~ 10(-9) Ω cm(2) at a Si doping concentration of 10(17) cm(-3).