A light incident angle switchable ZnO nanorod memristor: reversible switching behavior between two non-volatile memory devices.
basic_science · Level V
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- Record sourced from PubMed, PMID 23996234.
- Also identified by DOI 10.1002/adma.201303017.
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Abstract
A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.