Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.
basic_science · Level V
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- Record sourced from PubMed, PMID 24059470.
- Also identified by DOI 10.1021/nl402570u and PMC identifier 3834301.
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Abstract
Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.