p-Type InN nanowires.

Abstract

In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic growth process p-type InN can be realized for the first time by "direct" magnesium (Mg) doping. The presence of Mg acceptor energy levels in InN is confirmed by photoluminescence experiments, and a direct evidence of p-type conduction is demonstrated unambiguously by studying the transfer characteristics of InN nanowire field effect transistors. Moreover, the near-surface Fermi-level of InN can be tuned from nearly intrinsic to p-type degenerate by controlling Mg dopant incorporation, which is in contrast to the commonly observed electron accumulation on the grown surfaces of Mg-doped InN films. First-principle calculation using the VASP electronic package further shows that the p-type surface formed on Mg-doped InN nanowires is highly stable energetically.