A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials.

Jiang, Lili; Wu, Bin; Liu, Hongtao; Huang, Yuan; Chen, Jianyi; Geng, Dechao; Gao, Hongjun; Liu, Yunqi · Adv Mater · 2013

basic_science · Level V

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Abstract

A general method using a biased atomic force microscopy tip that allows a qualitative, fast, and reliable determination of key electronic properties such as metallic, n-, or p-doped characteristics has been reported for the first time. This method eliminates the detrimental effect of contact in the traditional transport measurement and is much simpler than the common-electrostatic force microscopy detection method, thus providing a powerful tool for fast characterizations of nanomaterials.