Sub 60 mV/decade switch using an InAs nanowire-Si heterojunction and turn-on voltage shift with a pulsed doping technique.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 24215512.
- Also identified by DOI 10.1021/nl402447h.
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Abstract
We report changes of turn-on voltage in InAs-Si heterojunction steep subthreshold-slope transistors by the Zn-pulsed doping technique for InAs nanowire channels. The doping of the nanowire channel moderately changes turn-on voltage from negative to positive voltage, while keeping a steep subthreshold-slope of 30 mV/decade under reverse bias direction. The formation of pseudointrinsic InAs segment is found to be important to make a normally off transistor with a steep subthreshold slope.
Medical subject headings
- Arsenicals
- Indium
- Nanotechnology
- Nanowires