Observation of single electron transport via multiple quantum states of a silicon quantum dot at room temperature.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 24289317.
- Also identified by DOI 10.1021/nl403204k.
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Abstract
Single electron transport through multiple quantum levels is realized in a Si quantum-dot device at room-temperature conditions. The energy spacing of more than triple the omnipresent thermal energy is obtained from an extremely small ellipsoidal Si quantum dot, and high charge stability is attained through a construction of the gate-all-around structure. These properties may move us a step closer to practical applications of quantum devices at elevated temperatures. An in-depth analysis on the transport behavior and quantum structure is presented.