Controllable co-segregation synthesis of wafer-scale hexagonal boron nitride thin films.
basic_science · Level V
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- Record sourced from PubMed, PMID 24307244.
- Also identified by DOI 10.1002/adma.201304301.
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Abstract
A facile and scalable co-segregation method is used to grow hexagonal boron nitride (h-BN) thin films from B- and N-containing metals. By annealing the sandwiched metal substrates in vacuum, sub-monolayer h-BN flakes, monolayer h-BN films, and multilayer h-BN thin films of varying thickness are successfully prepared. This approach follows an underneath-growth mode and exhibits good thickness- and location-control.