A multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 24310932.
- Also identified by DOI 10.1002/adma.201304335.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN p-n junction to develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from both experiment and theoretical calculations. The MIB solar cell shows a wide photovoltaic response from the UV to the near-IR region. This work opens up an interesting opportunity for high-efficiency IB solar cells in the photovoltaics field.