Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces.
basic_science · Level V
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- Record sourced from PubMed, PMID 24338762.
- Also identified by DOI 10.1002/adma.201304634.
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Abstract
Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2 -terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V(-1) s(-1) are achieved at this novel oxide interface.