Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates.
basic_science · Level V
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- Record sourced from PubMed, PMID 24338972.
- Also identified by DOI 10.1002/adma.201304872.
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Abstract
By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 μm. The carrier mobility can reach about 5650 cm(2) V(-1) s(-1) , which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice.