Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.
basic_science · Level V
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- Record sourced from PubMed, PMID 24369783.
- Also identified by DOI 10.1021/nl404160u.
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Abstract
We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.