Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 24403114.
- Also identified by DOI 10.1002/adma.201303388.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm(-2) ), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm(2) V(-1) s(-1) , Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.