Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs).

Xie, Wei; Liu, Feilong; Shi, Sha; Ruden, P Paul; Frisbie, C Daniel · Adv Mater · 2014

basic_science · Level V

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Abstract

A transport model based on hole-density-dependent trapping is proposed to explain the two unusual conductivity peaks at surface hole densities above 10(13) cm(-2) in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free-site channel at low hole density, and in the trap-site channel at larger hole density.