Mobility enhancement by Sb-mediated minimisation of stacking fault density in InAs nanowires grown on silicon.
basic_science · Level V
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- Record sourced from PubMed, PMID 24502770.
- Also identified by DOI 10.1021/nl5001554.
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Abstract
We report the growth of InAs(1-x)Sb(x) nanowires (0 ≤ x ≤ 0.15) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs(1-x)Sb(x) nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs0.85Sb0.15 nanowires than InAs nanowires.