Power-dependent Raman analysis of highly strained Si nanobridges.
basic_science · Level V
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- Record sourced from PubMed, PMID 24564181.
- Also identified by DOI 10.1021/nl404152r.
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Abstract
Strain analysis of complex three-dimensional nanobridges conducted via Raman spectroscopy requires careful experimentation and data analysis supported by simulations. A method combining micro-Raman spectroscopy with finite element analysis is presented, enabling a detailed understanding of strain-sensitive Raman data measured on Si nanobridges. Power-dependent measurements are required to account for the a priori unknown scattering efficiency related to size and geometry. The experimental data is used to assess the validity of previously published phonon deformation potentials.