Band mapping across a pn-junction in a nanorod by scanning tunneling microscopy.
basic_science · Level V
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- Record sourced from PubMed, PMID 24588335.
- Also identified by DOI 10.1021/nl500081m.
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Abstract
We map band-edges across a pn-junction that was formed in a nanorod. We form a single junction between p-type Cu2S and n-type CdS through a controlled cationic exchange process of CdS nanorods. We characterize nanorods of the individual materials and the single junction in a nanorod with an ultrahigh vacuum scanning tunneling microscope (UHV-STM) at 77 K. From scanning tunneling spectroscopy and correspondingly the density of states (DOS) spectra, we determine the conduction and valence band-edges at different points across the junction and the individual nanorods. We could map the band-diagram of nanorod-junctions to bring out the salient features of a diode, such as p- and n-sections, band-bending, depletion region, albeit interestingly in the nanoscale.