Three-dimensional location of a single dopant with atomic precision by aberration-corrected scanning transmission electron microscopy.

Ishikawa, Ryo; Lupini, Andrew R; Findlay, Scott D; Taniguchi, Takashi; Pennycook, Stephen J · Nano Lett · 2014

basic_science · Level V

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Abstract

Materials properties, such as optical and electronic response, can be greatly enhanced by isolated single dopants. Determining the full three-dimensional single-dopant defect structure and spatial distribution is therefore critical to understanding and adequately tuning functional properties. Combining quantitative Z-contrast scanning transmission electron microscopy images with image simulations, we show the direct determination of the atomic-scale depth location of an optically active, single atom Ce dopant embedded within wurtzite-type AlN. The method represents a powerful new tool for reconstructing three-dimensional information from a single, two-dimensional image.