Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 24668844.
- Also identified by DOI 10.1002/adma.201305215.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission.