Tunable, ultralow-power switching in memristive devices enabled by a heterogeneous graphene-oxide interface.
basic_science · Level V
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- Record sourced from PubMed, PMID 24677272.
- Also identified by DOI 10.1002/adma.201306028.
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Abstract
Memristive devices based on vertical heterostructures of graphene and TiOx show a significant power reduction that is up to ∼10(3) times smaller than that of conventional structures. This power reduction arises as a result of a tunneling barrier at the interface. The barrier is tunable, opening up the possibility of engineering several key memory characteristics.