Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments.
basic_science · Level V
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- Record sourced from PubMed, PMID 24797712.
- Also identified by DOI 10.1021/nn501728w.
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Abstract
MoOx shows promising potential as an efficient hole injection layer for p-FETs based on transition metal dichalcogenides. A combination of experiment and theory is used to study the surface and interfacial chemistry, as well as the band alignments for MoOx/MoS2 and MoOx/WSe2 heterostructures, using photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory. A Mo(5+) rich interface region is identified and is proposed to explain the similar low hole Schottky barriers reported in a recent device study utilizing MoOx contacts on MoS2 and WSe2.