Flexoelectric control of defect formation in ferroelectric epitaxial thin films.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 24847984.
- Also identified by DOI 10.1002/adma.201400654.
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Abstract
Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint ) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function.
Medical subject headings
- Electricity
- Mechanical Phenomena