Atomic layer deposited gallium oxide buffer layer enables 1.2 V open-circuit voltage in cuprous oxide solar cells.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 24862543.
- Also identified by DOI 10.1002/adma.201401054.
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Abstract
The power conversion efficiency of solar cells based on copper (I) oxide (Cu2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3 ) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.
Medical subject headings
- Copper
- Electric Power Supplies
- Gallium
- Solar Energy