p-i-n Heterojunction solar cells with a colloidal quantum-dot absorber layer.
basic_science · Level V
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- Record sourced from PubMed, PMID 24862978.
- Also identified by DOI 10.1002/adma.201401250.
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Abstract
A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices.